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Oyama, Hidenori*; Takakura, Kenichiro*; Nakabayashi, Masakazu*; Hirao, Toshio; Onoda, Shinobu; Kamiya, Tomihiro; Simoen, E.*; Claeys, C.*; Kuboyama, Satoshi*; Oka, Katsumi*; et al.
Nuclear Instruments and Methods in Physics Research B, 219-220, p.718 - 721, 2004/06
Times Cited Count：3 Percentile：24.89(Instruments & Instrumentation)no abstracts in English
Oshima, Takeshi; Morishita, Norio; Kamiya, Tomihiro; Isoya, Junichi*; Baba, Shinichi; Aihara, Jun; Yamaji, Masatoshi*; Ishihara, Masahiro
Proceedings of OECD/NEA 3rd Information Exchange Meeting on Basic Studies in the Field of High Temperature Engineering (OECD/NEA No.5309), p.197 - 202, 2004/00
For the application of SiC to electronic devices, it is necessary to develop the fabrication technique of high quality SiC substrates with uniform carrier concentration. Since phosphorus (P) atoms become shallow donors in SiC, nuclear transmutation doping (NTD) is thought to be a good method for the fabrication of n-type SiC substrates with uniform electron concentration. However, defects are also introduced in SiC by neutron irradiation. Although thermal annealing at high temperatures above 1500
C is carried out to remove defects after irradiation, heavy damage in SiC is hard to recover. Therefore, the process for the reduction of defects in SiC irradiated with neutrons is necessary to develop. In this study, neutron irradiation into SiC at elevated temperature was carried out to decrease radiation damage. The electrical properties of the samples are studied using Hall effect measurement. Furthermore, to establish the measurement technique for the estimation of P atoms created in SiC by NTD, P atoms in SiC were investigated using Electron Spin Resonance (ESR).
Hojo, Tomohiro; Aihara, Jun; Hojo, Kiichi; Furuno, Shigemi*; Yamamoto, Hiroyuki; Nitani, Noriko; Yamashita, Toshiyuki; Minato, Kazuo; Sakuma, Takaaki*
Journal of Nuclear Materials, 319, p.81 - 86, 2003/06
Times Cited Count：18 Percentile：74.43(Materials Science, Multidisciplinary)no abstracts in English
-ray irradiationOyama, Hidenori*; Hirao, Toshio; Simoen, E.*; Claeys, C.*; Onoda, Shinobu; Takami, Yasukiyo*; Ito, Hisayoshi
Physica B; Condensed Matter, 308-310, p.1185 - 1188, 2001/12
Times Cited Count：8 Percentile：44.94(Physics, Condensed Matter)no abstracts in English
Arai, Taketoshi; Ito, Hisayoshi; Terai, Takayuki*; Ishino, Shiori*
ECN-R--98-005, p.113 - 124, 1998/00
no abstracts in English
Shikama, Tatsuo*; Kakuta, Tsunemi; *; Ishihara, Masahiro; ; Arai, Taketoshi
ECN-R--98-005, p.125 - 143, 1998/00
no abstracts in English
Hojo, Kiichi; ; Furuno, Shigemi; *; *
Journal of Nuclear Materials, 212-215, p.281 - 286, 1994/00
Times Cited Count：15 Percentile：77.07(Materials Science, Multidisciplinary)no abstracts in English
; ; ; Shiraishi, K.
ASTM Special Technical Publication 725, p.247 - 268, 1981/00
no abstracts in English
*;
Carbon, 18, p.407 - 411, 1980/00
Times Cited Count：4 Percentile：34.9(Chemistry, Physical)no abstracts in English
Ogawa, Yutaka; Kondo, Tatsuo; ;
JAERI-M 8154, 12 Pages, 1979/02
no abstracts in English
Ogawa, Yutaka; ; ; ; Kondo, Tatsuo
Tainetsu Kinzoku Zairyo Dai-123-Iinkai Kenkyu Hokoku, 19(3), p.311 - 319, 1978/00
no abstracts in English
CShiraishi, K.; ; Katano, Y.
JAERI-M 6214, 20 Pages, 1975/08
no abstracts in English
CShiraishi, K.; ; Katano, Y.
Journal of Nuclear Materials, 57(3), p.361 - 364, 1975/03
Times Cited Count：13no abstracts in English
JAERI-M 5595, 137 Pages, 1974/03
no abstracts in English
*; Ogawa, Yutaka
Nihon Genshiryoku Gakkai-Shi, 14(11), p.626 - 632, 1972/11
no abstracts in English
Tanso, (66), p.89 - 98, 1971/00
no abstracts in English
pellets irradiated at high temperature*; Ichikawa, Michio
Nihon Genshiryoku Gakkai-Shi, 10(8), p.426 - 434, 1968/00
no abstracts in English
